Large-Area Synthesis of Highly Crystalline WSe<sub>2</sub> Monolayers and Device Applications
نویسندگان
چکیده
Jing-Kai Huang, Jiang Pu, Chang-Lung Hsu, Ming-Hui Chiu, Zhen-Yu Juang, Yung-Huang Chang, Wen-Hao Chang, Yoshihiro Iwasa, Taishi Takenobu,* and Lain-Jong Li * Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan, Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan, Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Quantum-Phase Electronics Center and Department of Applied Physics, School of Engineering, The University of Tokyo, Hongo, Bunkyo, Tokyo 113-8654, Japan, and Department of Medical Research, China Medical University Hospital, Taichung, Taiwan
منابع مشابه
Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers
Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of co...
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